 | |
| PartNumber | BCV61CE6327HTSA1 |
| Description | Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR |
| Manufacturer | Infineon |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Y |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-143-4 |
| Transistor Polarity | NPN |
| Configuration | Dual |
| Collector Emitter Voltage VCEO Max | 30 V |
| Collector Base Voltage VCBO | 30 V |
| Emitter Base Voltage VEBO | 6 V |
| Collector Emitter Saturation Voltage | 200 mV |
| Maximum DC Collector Current | 200 mA |
| Gain Bandwidth Product fT | 250 MHz |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Series | BCV61 |
| DC Current Gain hFE Max | 800 |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 420 |
| Pd Power Dissipation | 300 mW |
| Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Part # Aliases | 61C BCV BCV61CE6327XT E6327 SP000010887 |
| Unit Weight | 0.000388 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BCV61CE6327HTSA1 | TRANSISTOR NPN DOUBLE SOT-143 |