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| PartNumber | BDP949H6327 | BDP949H6327XTSA1-CUT TAPE | BDP949H6327XTSA1 |
| Description | TRANS NPN 60V 3A SOT223 | ||
| Manufacturer | Infineon Technologies | - | - |
| Product Category | Transistors - Bipolar (BJT) - RF | - | - |
| Packaging | Reel | - | - |
| Part Aliases | 949 BDP H6327 SP000748382 | - | - |
| Unit Weight | 0.006632 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SOT-223-4 | - | - |
| Technology | Si | - | - |
| Configuration | Single | - | - |
| Pd Power Dissipation | 5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| DC Collector Base Gain hfe Min | 50 at 2 A 2 V | - | - |
| DC Current Gain hFE Max | - | - | - |