 |  | | |
| PartNumber | BFU550XAR | BFU550X | BFU550XR |
| Description | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| Manufacturer | NXP | NXP Semiconductors | NXP Semiconductors |
| Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Transistor Type | Bipolar Wideband | NPN | NPN |
| Technology | Si | Si | Si |
| Transistor Polarity | NPN | NPN | NPN |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 16 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 15 mA | 15 mA | 15 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Configuration | Single | Dual | Dual |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT143B-4 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Collector Base Voltage VCBO | 24 V | - | - |
| DC Current Gain hFE Max | 200 | - | - |
| Operating Frequency | 900 MHz | 900 MHz | 900 MHz |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Type | Wideband RF Transistor | - | - |
| Brand | NXP Semiconductors | - | - |
| Gain Bandwidth Product fT | 11 GHz | - | - |
| Maximum DC Collector Current | 80 mA | 80 mA | 80 mA |
| Pd Power Dissipation | 450 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934067708215 | - | - |
| Unit Weight | 0.000313 oz | - | - |
| Series | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Package Case | - | TO-253-4, TO-253AA | SOT-143R |
| Mounting Type | - | Surface Mount, Gull Wing | Surface Mount |
| Supplier Device Package | - | SOT-143B | SOT-143R |
| Power Max | - | 450mW | 450mW |
| Current Collector Ic Max | - | 50mA | 50mA |
| Voltage Collector Emitter Breakdown Max | - | 12V | 12V |
| DC Current Gain hFE Min Ic Vce | - | 60 @ 15mA, 8V | 60 @ 15mA, 8V |
| Frequency Transition | - | 11GHz | 11GHz |
| Noise Figure dB Typ f | - | 0.75db @ 900MHz | 0.7dB @ 900MHz |
| Gain | - | 21.5dB | 21.5dB |
| Pd Power Dissipation | - | 450 mW | 450 mW |
| Collector Emitter Voltage VCEO Max | - | 16 V | 16 V |
| Emitter Base Voltage VEBO | - | 2 V | 2 V |
| DC Collector Base Gain hfe Min | - | 60 | 60 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU550XAR | RF Bipolar Transistors NPN wideband silicon RF transistor | |
| BFU550XVL | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| BFU550XRR | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| BFU550XRVL | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| BFU550X | New and Original | ||
| BFU550XR | New and Original | ||
| BFU550XR215 | - Bulk (Alt: BFU550XR215) | ||
| BFU550XR235 | - Bulk (Alt: BFU550XR235) | ||
| BFU550XRR215 | - Bulk (Alt: BFU550XRR215) | ||
| BFU550XVL | RF Bipolar Transistors NPN wideband silicon RF transisto | ||
| BFU550XRVL | RF Bipolar Transistors NPN wideband silicon RF transisto | ||
| BFU550XAR | RF TRANS NPN 12V 11GHZ SOT143B | ||
| BFU550XRR | RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto | ||
| BFU550X,215 | New and Original | ||
| BFU550XAR-CUT TAPE | New and Original | ||
| BFU550XRR-CUT TAPE | New and Original |