 |  | | |
| PartNumber | BFU725F/N1,115 | BFU725F/N1 LFP | BFU725F/N1.115 |
| Description | RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN | ||
| Manufacturer | NXP | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Collector Emitter Voltage VCEO Max | 2.8 V | - | - |
| Emitter Base Voltage VEBO | 0.55 V | - | - |
| Continuous Collector Current | 40 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 10 V | - | - |
| DC Current Gain hFE Max | 160 at 10 mA at 2 V | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Operating Frequency | 55 GHz | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Width | 1.35 mm | - | - |
| Brand | NXP Semiconductors | - | - |
| Gain Bandwidth Product fT | 55000 MHz | - | - |
| Maximum DC Collector Current | 0.04 A | - | - |
| Pd Power Dissipation | 136 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934063513115 | - | - |
| Unit Weight | 0.000235 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU725F/N1,115 | RF Bipolar Transistors 2.8V 0.04A 4-Pin Trans GP BJT NPN | |
| BFU725F/N1 LFP | New and Original | ||
| BFU725F/N1.115 | New and Original | ||
| BFU725F/N1/S115 | New and Original | ||
| BFU725F/N1 | New and Original | ||
| BFU725F/N1115 | New and Original | ||
| BFU725F/N1+115 | New and Original | ||
| BFU725F/N1 115 | NPN WIDEBAND SILICON GERMANIUM RF TRANSISTOR ROHS COMPLIANT: YES | ||
| BFU725F/N1,115-CUT TAPE | New and Original |