 |  | | |
| PartNumber | BGA711N7E6327XTSA1 | BGA711N7 | BGA711N7 E6327 |
| Description | RF Amplifier 3G/3.5G/4GSingleBand SiGe Bipolar LNA | ||
| Manufacturer | Infineon | - | - |
| Product Category | RF Amplifier | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSNP-7 | - | - |
| Type | RF Silicon Germanium | - | - |
| Technology | SiGe | - | - |
| Operating Frequency | 2.1 MHz | - | - |
| Minimum Operating Temperature | - 30 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Series | BGA711N7 | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | RF Amplifier | - | - |
| Factory Pack Quantity | 7500 | - | - |
| Subcategory | Wireless & RF Integrated Circuits | - | - |
| Part # Aliases | 711N7 BGA E6327 SP001061040 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BGA711N7E6327XTSA1 | RF Amplifier 3G/3.5G/4GSingleBand SiGe Bipolar LNA | |
| BGA711N7 | New and Original | ||
Infineon Technologies |
BGA711N7 E6327 | New and Original | |
| BGA711N7E6327XTSA1 | RF Bipolar Transistors 3G/3.5G/4GSingleBand SiGe Bipolar LNA |