 | |  | |
| PartNumber | BSB056N10NN3 G | BSB056N10NN3GXUMA1 | BSB053N03LP G |
| Description | MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 | MOSFET MV POWER MOS | MOSFET N-CH 30V 71A 2WDSON |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | WDSON-2-3 | WDSON-2-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 83 A | - | - |
| Rds On Drain Source Resistance | 5.6 mOhms | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 0.7 mm | 0.7 mm | - |
| Length | 6.35 mm | 6.35 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.05 mm | 5.05 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | BSB056N10NN3GXUMA1 BSB56N1NN3GXT SP000604540 | BSB056N10NN3 BSB56N1NN3GXT G SP000604540 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSB056N10NN3 G | MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 | |
| BSB056N10NN3GXUMA1 | MOSFET N-CH 100V 9A WDSON-2 | ||
| BSB053N03LP G | MOSFET N-CH 30V 71A 2WDSON | ||
Infineon Technologies |
BSB056N10NN3GXUMA1 | MOSFET MV POWER MOS | |
| BSB053N03LPG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSB05505HP | New and Original | ||
| BSB056N10NN3 G | Trans MOSFET N-CH 100V 9A 7-Pin WDSON | ||
| BSB056N10NN3G | Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540) |