 | | | |
| PartNumber | BSC080N03LSGATMA1 | BSC080N03MS G | BSC080N03MSGATMA1 |
| Description | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 53 A | 13 A | - |
| Rds On Drain Source Resistance | 6.7 mOhms | 8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 21 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 35 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 2.6 ns | 5.6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.8 ns | 5.4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 10 ns | - |
| Typical Turn On Delay Time | 3.3 ns | 10 ns | - |
| Part # Aliases | BSC080N03LS BSC8N3LSGXT G SP000275114 | BSC080N03MSGATMA1 BSC8N3MSGXT SP000311514 | BSC080N03MS BSC8N3MSGXT G SP000311514 |
| Unit Weight | 0.003915 oz | 0.006349 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC080N03LSGATMA1 | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | |
| BSC080N03MS G | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | ||
| BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | ||
| BSC080N03LSGATMA1 | MOSFET N-CH 30V 53A TDSON-8 | ||
| BSC080N03MSGATMA1 | MOSFET N-CH 30V 53A TDSON-8 | ||
| BSC080P03LSGAUMA1 | MOSFET P-CH 30V 30A TDSON-8 | ||
Infineon Technologies |
BSC080N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSC080N03LS | New and Original | ||
| BSC080N03LS G | Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G) | ||
| BSC080N03LSG | 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC080N03MS G | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G) | ||
| BSC080N03MSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC080N03NMS | New and Original | ||
| BSC080P03LS | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | ||
| BSC080P03LSG | Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R (Alt: BSC080P03LS G) | ||
| BSC080P03LSGAUMA1 , TDK5 | New and Original | ||
| BSC080N03LSGATMA1-CUT TAPE | New and Original |