BSC090

BSC090N03MSGATMA1 vs BSC090N03MSGXT

 
PartNumberBSC090N03MSGATMA1BSC090N03MSGXT
DescriptionMOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3MMOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current48 A48 A
Rds On Drain Source Resistance7.5 mOhms7.5 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge24 nC24 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation32 W32 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOS-
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
SeriesOptiMOS 3M-
Transistor Type1 N-Channel1 N-Channel
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min28 S28 S
Fall Time5.4 ns5.4 ns
Product TypeMOSFETMOSFET
Rise Time5 ns5 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time8.8 ns8.8 ns
Typical Turn On Delay Time9 ns9 ns
Part # AliasesBSC090N03MS BSC9N3MSGXT G SP000313120BSC090N03MS BSC090N03MSGATMA1 G SP000313120
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC090N03MSGATMA1 MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC090N03MSGXT MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC090N03MSGATMA1 MOSFET N-CH 30V 48A TDSON-8
BSC090N03MSGXT MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
BSC090N03MSGATMA1 , TDZ New and Original
BSC090N03MSGATMA1-CUT TAPE New and Original
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