BSC100N06

BSC100N06LS3 G vs BSC100N06LS vs BSC100N06LS3G

 
PartNumberBSC100N06LS3 GBSC100N06LSBSC100N06LS3G
DescriptionMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 360V,50A,N Channel Power MOSFET
ManufacturerInfineonINFINEON
Product CategoryMOSFETFETs - SingleIC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance7.8 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min32 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesBSC100N06LS3GATMA1 BSC1N6LS3GXT SP000453664--
Unit Weight0.003527 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
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BSC100N06LS New and Original
BSC100N06LS3 G Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
BSC100N06LS3G 60V,50A,N Channel Power MOSFET
BSC100N06LS3GXT New and Original
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