 | | |
| PartNumber | BSC118N10NS G | BSC118N10NSGATMA1 |
| Description | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 11 A | - |
| Rds On Drain Source Resistance | 11.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 114 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Series | OptiMOS 2 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 21 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 32 ns | - |
| Typical Turn On Delay Time | 21 ns | - |
| Part # Aliases | BSC118N10NSGATMA1 BSC118N1NSGXT SP000379599 | BSC118N10NS BSC118N1NSGXT G SP000379599 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC118N10NS G | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | |
| BSC118N10NSGATMA1 | MOSFET N-CH 100V 71A TDSON-8 | ||
| BSC118N10NS G | Darlington Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
Infineon Technologies |
BSC118N10NSGATMA1 | MOSFET MV POWER MOS | |
| BSC118N10NS | New and Original | ||
| BSC118N10NS3G | New and Original | ||
| BSC118N10NSGATMA1 , TDZ1 | New and Original | ||
| BSC118N10NSG | Power Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |