BSC160N10NS

BSC160N10NS3GATMA1 vs BSC160N10NS3 G

 
PartNumberBSC160N10NS3GATMA1BSC160N10NS3 G
DescriptionMOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current42 A42 A
Rds On Drain Source Resistance13.9 mOhms13.9 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge25 nC25 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation60 W60 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min21 S21 S
Fall Time5 ns5 ns
Product TypeMOSFETMOSFET
Rise Time15 ns15 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns22 ns
Typical Turn On Delay Time13 ns13 ns
Part # AliasesBSC160N10NS3 BSC16N1NS3GXT G SP000482382BSC160N10NS3GATMA1 BSC16N1NS3GXT SP000482382
Unit Weight0.010582 oz0.003527 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC160N10NS3GATMA1 MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
BSC160N10NS3 G MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
BSC160N10NS3 G MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3
BSC160N10NS3GATMA1 MOSFET N-CH 100V 42A TDSON-8
BSC160N10NS New and Original
BSC160N10NS3G Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G)
BSC160N10NS3GATMA1 , TDZ New and Original
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