BSC36

BSC360N15NS3 G vs BSC360N15NS vs BSC360N15NS3G

 
PartNumberBSC360N15NS3 GBSC360N15NSBSC360N15NS3G
DescriptionMOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon TechnologiesINFINEON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance36 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation74 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Fall Time4 ns4 ns-
Product TypeMOSFET--
Rise Time6 ns6 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns12 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesBSC360N15NS3GATMA1 BSC36N15NS3GXT SP000778134--
Unit Weight0.003527 oz--
Part Aliases-BSC360N15NS3GATMA1 BSC360N15NS3GXT SP000778134-
Package Case-TDSON-8-
Pd Power Dissipation-74 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-33 A-
Vds Drain Source Breakdown Voltage-150 V-
Vgs th Gate Source Threshold Voltage-3 V-
Rds On Drain Source Resistance-36 mOhms-
Qg Gate Charge-12 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC360N15NS3 G MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3
BSC360N15NS3GATMA1 MOSFET N-CH 150V 33A 8TDSON
Infineon Technologies
Infineon Technologies
BSC360N15NS3GATMA1 MOSFET MV POWER MOS
BSC360N15NS New and Original
BSC360N15NS3G New and Original
BSC360N15NS3GS New and Original
BSC360N15NS3 G Darlington Transistors MOSFET N-Ch 150V 33A TDSON-8 OptiMOS 3
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