 | | | |
| PartNumber | BSM100GB120DN2K | BSM100GB120DN2K G | BSM100GB120DN2K. |
| Description | IGBT Modules 1200V 100A DUAL | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Half Bridge | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Continuous Collector Current at 25 C | 145 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 700 W | - | - |
| Package / Case | Half Bridge1 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.5 mm | - | - |
| Length | 94 mm | - | - |
| Width | 34 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM100GB120DN2KHOSA1 SP000101733 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM100GB120DN2K | IGBT Modules 1200V 100A DUAL | |
| BSM100GB120DN2KHOSA1 | IGBT 2 MED POWER 34MM-1 | ||
| BSM100GB120DN2K G | New and Original | ||
| BSM100GB120DN2K. | New and Original | ||
| BSM100GB120DN2K | IGBT Modules 1200V 100A DUAL |