BSM100GD120DN

BSM100GD120DN2 vs BSM100GD120DN2BOSA1 vs BSM100GD120DN2V2

 
PartNumberBSM100GD120DN2BSM100GD120DN2BOSA1BSM100GD120DN2V2
DescriptionIGBT Modules 1200V 100A FL BRIDGEIGBT 2 LOW POWER ECONO3-1
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C150 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation680 W--
Package / CaseEconoPACK 3A--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM100GD120DN2BOSA1 SP000100365--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM100GD120DN2 IGBT Modules 1200V 100A FL BRIDGE
BSM100GD120DN2BOSA1 IGBT 2 LOW POWER ECONO3-1
BSM100GD120DN2V2 New and Original
BSM100GD120DN2 IGBT Modules 1200V 100A FL BRIDGE
Top