BSM10GP1

BSM10GP120 vs BSM10GP120_B9 vs BSM10GP120BOSA1

 
PartNumberBSM10GP120BSM10GP120_B9BSM10GP120BOSA1
DescriptionIGBT Modules 1200V 10A PIMIGBT Modules IGBT 1200V 10AIGBT 2 LOW POWER ECONO2-5
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.4 V--
Continuous Collector Current at 25 C20 A--
Gate Emitter Leakage Current300 nA--
Pd Power Dissipation100 W--
Package / CaseEconoPIM2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM10GP120BOSA1 SP000014914--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM10GP120 IGBT Modules 1200V 10A PIM
BSM10GP120BOSA1 IGBT 2 LOW POWER ECONO2-5
BSM10GP120_B9 IGBT Modules IGBT 1200V 10A
BSM10GP120 IGBT Modules 1200V 10A PIM
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