 | | | |
| PartNumber | BSM150GD60DLC | BSM150GD60DLCBOSA1 | BSM150GD120DN2 |
| Description | IGBT Modules 600V 150A 3-PHASE | Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.95 V | - | - |
| Continuous Collector Current at 25 C | 180 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 570 W | - | - |
| Package / Case | EconoPACK 3A | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Height | 17 mm | - | - |
| Length | 122 mm | - | - |
| Technology | Si | - | - |
| Width | 62 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM150GD60DLCBOSA1 SP000100394 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM150GD60DLC | IGBT Modules 600V 150A 3-PHASE | |
| BSM150GD60DLCBOSA1 | Insulated Gate Bipolar Transistor, 180A I(C), 600V V(BR)CES, N-Channel | ||
| BSM150GD120DN2 | New and Original | ||
Infineon Technologies |
BSM150GD60DLC | IGBT Modules 600V 150A 3-PHASE |