BSM15GD120DN2E

BSM15GD120DN2E3224 vs BSM15GD120DN2E vs BSM15GD120DN2E3224BOSA1

 
PartNumberBSM15GD120DN2E3224BSM15GD120DN2EBSM15GD120DN2E3224BOSA1
DescriptionIGBT Modules N-CH 1.2KV 25AIGBT 2 LOW POWER ECONO2-1
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C25 A--
Gate Emitter Leakage Current150 nA--
Pd Power Dissipation145 W--
Package / CaseEconoPACK 2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM15GD120DN2E3224BOSA1 SP000100360--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM15GD120DN2E3224 IGBT Modules N-CH 1.2KV 25A
BSM15GD120DN2E3224BOSA1 IGBT 2 LOW POWER ECONO2-1
BSM15GD120DN2E New and Original
BSM15GD120DN2E3226 New and Original
BSM15GD120DN2E3256 New and Original
BSM15GD120DN2E3224 IGBT Modules N-CH 1.2KV 25A
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