BSM200GB120DN

BSM200GB120DN2 vs BSM200GB120DN2 SCH300 vs BSM200GB120DN2B

 
PartNumberBSM200GB120DN2BSM200GB120DN2 SCH300BSM200GB120DN2B
DescriptionIGBT Modules 1200V 200A DUAL
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHalf Bridge--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C290 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1.4 kW--
Package / CaseHalf Bridge2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM200GB120DN2HOSA1 SP000014913--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM200GB120DN2 IGBT Modules 1200V 200A DUAL
BSM200GB120DN2HOSA1 IGBT 2 MED POWER 62MM-1
BSM200GB120DN2 SCH300 New and Original
BSM200GB120DN2B New and Original
BSM200GB120DN2 IGBT Modules 1200V 200A DUAL
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