 |  | | |
| PartNumber | BSM50GB120DLC | BSM50GB120DN2 | BSM50GB120DLCHOSA1 |
| Description | IGBT Modules 1200V 50A DUAL | IGBT Modules 1200V 50A DUAL | IGBT 2 MED POWER 34MM-1 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | N | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Dual | Half Bridge | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 2.4 V | 2.5 V | - |
| Continuous Collector Current at 25 C | 115 A | 78 A | - |
| Gate Emitter Leakage Current | 400 nA | 200 nA | - |
| Pd Power Dissipation | 460 W | 400 W | - |
| Package / Case | 32 mm | Half Bridge1 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Height | 30.5 mm | 30.5 mm | - |
| Length | 94 mm | 94 mm | - |
| Width | 34 mm | 34 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | BSM50GB120DLCHOSA1 SP000100474 | BSM50GB120DN2HOSA1 SP000095922 | - |
| Unit Weight | 6.349313 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM50GB120DLC | IGBT Modules 1200V 50A DUAL | |
| BSM50GB120DN2 | IGBT Modules 1200V 50A DUAL | ||
| BSM50GB120DLCHOSA1 | IGBT 2 MED POWER 34MM-1 | ||
| BSM50GB120DN2HOSA1 | IGBT 2 MED POWER 34MM-1 | ||
| BSM50GB120D | New and Original | ||
| BSM50GB120DN1 | New and Original | ||
| BSM50GB120N2 | Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel | ||
| BSM50GB121D | New and Original | ||
| BSM50GB120DLC | IGBT Modules 1200V 50A DUAL | ||
| BSM50GB120DN2 | IGBT Modules 1200V 50A DUAL |