BSO150N03M

BSO150N03MD G vs BSO150N03MD vs BSO150N03MDG

 
PartNumberBSO150N03MD GBSO150N03MDBSO150N03MDG
DescriptionMOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3MSmall Signal Field-Effect Transistor, 7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current9.3 A--
Rds On Drain Source Resistance12.5 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge17 nC, 17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesOptiMOS 3M--
Transistor Type2 N-Channel--
Width3.9 mm--
BrandInfineon Technologies--
Forward Transconductance Min12 S, 12 S--
Fall Time4.2 ns, 4.2 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time3.8 ns, 3.8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8.7 ns, 8.7 ns--
Typical Turn On Delay Time7.3 ns, 7.3 ns--
Part # AliasesBSO150N03MDGXUMA1 BSO15N3MDGXT SP000447476--
Unit Weight0.019048 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
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BSO150N03MDG Small Signal Field-Effect Transistor, 7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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