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| PartNumber | BSO150N03MDGXUMA1 | BSO150N03MDG |
| Description | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M | Small Signal Field-Effect Transistor, 7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | INFINEON |
| Product Category | MOSFET | FETs - Arrays |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SO-8 | - |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 9.3 A | - |
| Rds On Drain Source Resistance | 12.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 17 nC, 17 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 1.75 mm | - |
| Length | 4.9 mm | - |
| Series | OptiMOS 3M | - |
| Transistor Type | 2 N-Channel | - |
| Width | 3.9 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 12 S, 12 S | - |
| Fall Time | 4.2 ns, 4.2 ns | - |
| Moisture Sensitive | Yes | - |
| Product Type | MOSFET | - |
| Rise Time | 3.8 ns, 3.8 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 8.7 ns, 8.7 ns | - |
| Typical Turn On Delay Time | 7.3 ns, 7.3 ns | - |
| Part # Aliases | BSO150N03MD BSO15N3MDGXT G SP000447476 | - |
| Unit Weight | 0.019048 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSO150N03MDGXUMA1 | MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M | |
| BSO150N03MDGXUMA1 | MOSFET 2N-CH 30V 8A 8DSO | ||
| BSO150N03MDG | Small Signal Field-Effect Transistor, 7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |