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| PartNumber | BSO330N02K(330N2K) | BSO330N02KG | BSO330N02K G |
| Description | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 | |
| Manufacturer | - | - | |
| Product Category | - | - | FETs - Arrays |
| Series | - | - | OptiMOS 2 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSO330N02KGFUMA1 SP000380284 |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | DSO-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 2 Channel |
| Configuration | - | - | Dual Dual Drain |
| Transistor Type | - | - | 2 N-Channel |
| Pd Power Dissipation | - | - | 2.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 2.8 ns |
| Rise Time | - | - | 16.8 ns |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 5.4 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 30 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 13.4 ns |
| Typical Turn On Delay Time | - | - | 7.4 ns |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| BSO330N02K(330N2K) | New and Original | ||
| BSO330N02KG | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSO330N02K G | IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 | ||
Infineon Technologies |
BSO330N02KGFUMA1 | MOSFET 2N-CH 20V 5.4A 8DSO |