BSO615N

BSO615N G vs BSO615NGHUMA1 vs BSO615N

 
PartNumberBSO615N GBSO615NGHUMA1BSO615N
DescriptionMOSFET N-Ch 60V 2.6A SO-8MOSFET N-Ch 60V 2.6A SO-8MOSFET 2N-CH 60V 2.6A 8SOIC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current2.6 A2.6 A-
Rds On Drain Source Resistance120 mOhms120 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge20 nC20 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W2 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
TradenameSIPMOSSIPMOS-
PackagingReelReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesBSO615--
Transistor Type2 N-Channel2 N-Channel-
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min2.4 S2.4 S-
Fall Time15 ns15 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time15 ns15 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesBSO615NGHUMA1 BSO615NGXT SP000216316BSO615N BSO615NGXT G SP000216316-
Unit Weight0.017870 oz0.019048 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSO615N G MOSFET N-Ch 60V 2.6A SO-8
BSO615NGHUMA1 MOSFET N-Ch 60V 2.6A SO-8
BSO615N MOSFET 2N-CH 60V 2.6A 8SOIC
BSO615NGHUMA1 MOSFET 2N-CH 60V 2.6A 8SOIC
BSO615N G New and Original
BSO615N/615N New and Original
BSO615NG New and Original
BSO615NV New and Original
BSO615NGHUMA1-CUT TAPE New and Original
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