| PartNumber | BSP149H6327XTSA1 | BSP149H6906XTSA1 |
| Description | MOSFET N-Ch 200V 660mA SOT-223-3 | MOSFET N-Ch 200V 140mA SOT-223-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT-223-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V |
| Id Continuous Drain Current | 660 mA | 660 mA |
| Rds On Drain Source Resistance | 1.8 Ohms | 1 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | 11 nC | 14 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.8 W | 1.8 W |
| Configuration | Single | Single |
| Channel Mode | Depletion | Depletion |
| Packaging | Reel | Reel |
| Height | 1.6 mm | 1.6 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | BSP149 | BSP149 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.5 mm | 3.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 0.4 S | 400 mS |
| Fall Time | 21 ns | 21 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 3.4 ns | 3.4 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns |
| Typical Turn On Delay Time | 5.1 ns | 5.1 ns |
| Part # Aliases | BSP149 H6327 SP001058818 | BSP149 H6906 SP001058604 |
| Unit Weight | 0.003951 oz | 0.003951 oz |