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| PartNumber | BSP149H6327XTSA1 | BSP149H6327 | BSP149H6327XTSA1-CUT TAPE |
| Description | MOSFET N-Ch 200V 660mA SOT-223-3 | 200V,0.66A,N-channel Power MOSFET | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 660 mA | - | - |
| Rds On Drain Source Resistance | 1.8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Depletion | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP149 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 0.4 S | - | - |
| Fall Time | 21 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.4 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 5.1 ns | - | - |
| Part # Aliases | BSP149 H6327 SP001058818 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP149H6327XTSA1 | MOSFET N-Ch 200V 660mA SOT-223-3 | |
| BSP149H6327XTSA1 | MOSFET N-CH 200V 660MA SOT-223 | ||
| BSP149H6327 | 200V,0.66A,N-channel Power MOSFET | ||
| BSP149H6327XTSA1-CUT TAPE | New and Original |