BSS131H

BSS131H6327XT vs BSS131H6327 vs BSS131H6327 , MAX6328UR2

 
PartNumberBSS131H6327XTBSS131H6327BSS131H6327 , MAX6328UR2
DescriptionMOSFET N-Ch 240V 100mA SOT-23-3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.11A I(D), 240V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage240 V--
Id Continuous Drain Current110 mA--
Rds On Drain Source Resistance14 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge2.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation360 mW--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesBSS131--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandInfineon Technologies--
Forward Transconductance Min0.06 S--
Fall Time64.5 ns--
Product TypeMOSFET--
Rise Time3.1 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.7 ns--
Typical Turn On Delay Time3.3 ns--
Part # AliasesBSS131 BSS131H6327XTSA1 H6327 SP000702620--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSS131H6327XTSA1 MOSFET N-Ch 240V 100mA SOT-23-3
BSS131H6327XT MOSFET N-Ch 240V 100mA SOT-23-3
BSS131H6327XTSA1 MOSFET N-CH 240V 0.11A SOT23
BSS131H6327 SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.11A I(D), 240V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSS131H6327 , MAX6328UR2 New and Original
BSS131H6327XTSA1INFINEON New and Original
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