 |  | | |
| PartNumber | BSS192P H6327 | BSS192PE6327 | BSS192PE6327T |
| Description | MOSFET P-Ch -250V -190mA SOT-89-3 | MOSFET P-CH 250V 0.19A SOT-89 | MOSFET P-CH 250V 0.19A SOT-89 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 190 mA | - | - |
| Rds On Drain Source Resistance | 7.7 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | - 6.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Series | BSS192 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 2.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 190 mS | - | - |
| Fall Time | 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.2 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 72 ns | - | - |
| Typical Turn On Delay Time | 4.7 ns | - | - |
| Part # Aliases | BSS192PH6327FTSA1 SP001047642 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS192PH6327FTSA1 | MOSFET P-Ch -250V -190mA SOT-89-3 | |
| BSS192P H6327 | MOSFET P-Ch -250V -190mA SOT-89-3 | ||
| BSS192PE6327 | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PH6327FTSA1 | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PL6327HTSA1 | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PE6327T | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
Nexperia |
BSS192,115 | MOSFET TAPE-7 MOSFET | |
| BSS192,135 | MOSFET TAPE13 PWR-MOS | ||
| BSS192,115 | MOSFET P-CH 240V 0.2A SOT89 | ||
| BSS192,135 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
Infineon Technologies |
BSS192PH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSS192E-6327 | New and Original | ||
| BSS192.115 | Transistor: P-MOSFET, unipolar, -240V, -0.12A, 560mW, SOT89 | ||
| BSS192P H6327 | P-CH -250V -190mA 12Ohm SOT89 | ||
| BSS192 | Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | ||
| BSS192 , ME6401C28-C18M6 | New and Original | ||
| BSS192 E6327 | New and Original | ||
| BSS192115 | Now Nexperia BSS192 - Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | ||
| BSS192E6327 | 150MA, 240V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET | ||
| BSS192P | New and Original | ||
| BSS192P BSS192 | New and Original | ||
| BSS192P L6327 | MOSFET P-Ch -250V 190mA SOT-89-3 | ||
| BSS192PL6327 | New and Original | ||
| BSS192T/R | New and Original | ||
| BSS192,115-CUT TAPE | New and Original |