 |  | |
| PartNumber | BSS606NH6327XTSA1 | BSS606NH6327 |
| Description | MOSFET N-Ch 60V 3.2A SOT-89-3 | Nchannel 60V 3.2A 90mO @4.5V - Bulk (Alt: BSS606NH6327) |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | PG-SOT-89-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 3.2 A | - |
| Rds On Drain Source Resistance | 60 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 3.7 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.5 mm | - |
| Length | 4.5 mm | - |
| Series | BSS606 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 2.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 6 S | - |
| Fall Time | 2.1 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 2.6 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns | - |
| Typical Turn On Delay Time | 5.6 ns | - |
| Part # Aliases | BSS606N H6327 SP000691152 | - |
| Unit Weight | 0.004603 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS606NH6327XTSA1 | MOSFET N-Ch 60V 3.2A SOT-89-3 | |
| BSS606NH6327XTSA1 | MOSFET N-CH 60V 3.2A SOT89 | ||
| BSS606NH6327 | Nchannel 60V 3.2A 90mO @4.5V - Bulk (Alt: BSS606NH6327) |