BSS670S2LH6327X

BSS670S2LH6327XT vs BSS670S2LH6327XTSA1 vs BSS670S2LH6327XTSA1-CUT TAPE

 
PartNumberBSS670S2LH6327XTBSS670S2LH6327XTSA1BSS670S2LH6327XTSA1-CUT TAPE
DescriptionMOSFET N-Ch 55V 540mA SOT-23-3MOSFET N-Ch 55V 540mA SOT-23-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current540 mA540 mA-
Rds On Drain Source Resistance650 mOhms650 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge1.7 nC1.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation360 mW360 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length2.9 mm2.9 mm-
SeriesBSS670S2BSS670S2-
Transistor Type1 N-Channel1 N-Channel-
Width1.3 mm1.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min600 mS600 mS-
Fall Time24 ns24 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns25 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns21 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesBSS670S2LH6327XTSA1 SP000928950BSS670S2L BSS67S2LH6327XT H6327 SP000928950-
Unit Weight0.000282 oz0.000282 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSS670S2LH6327XT MOSFET N-Ch 55V 540mA SOT-23-3
BSS670S2LH6327XTSA1 MOSFET N-Ch 55V 540mA SOT-23-3
BSS670S2LH6327XTSA1 MOSFET N-CH 55V 540MA SOT23
BSS670S2LH6327XT MOSFET N-Ch 55V 540mA SOT-23-3
BSS670S2LH6327XTSA1-CUT TAPE New and Original
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