 |  |  | |
| PartNumber | BSV236SPH6327XT | BSV236SPH6327 | BSV236SPH6327XTSA1 |
| Description | MOSFET P-Ch -20V -1.5A SOT-363-6 | MOSFET, P CH, -20V, -1.5A, SOT-363-6 | MOSFET P-CH 20V 1.5A SOT363 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 131 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | - 5.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 560 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | BSV236 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 2.2 S | - | - |
| Fall Time | 12.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14.1 ns | - | - |
| Typical Turn On Delay Time | 5.7 ns | - | - |
| Part # Aliases | BSV236SP BSV236SPH6327XTSA1 H6327 SP000917672 | - | - |
| Unit Weight | 0.000265 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSV236SPH6327XT | MOSFET P-Ch -20V -1.5A SOT-363-6 | |
| BSV236SPH6327XTSA1 | MOSFET P-CH 20V 1.5A SOT363 | ||
| BSV236SPH6327 | MOSFET, P CH, -20V, -1.5A, SOT-363-6 | ||
| BSV236SPH6327XT | MOSFET P-Ch -20V -1.5A SOT-363-6 |