| PartNumber | BSZ018N04LS6ATMA1 | BSZ018NE2LS | BSZ018NE2LSATMA1 |
| Description | MOSFET 40V Mosfet 1,8mOhm, S3O8MOSFET, Power MOSFET | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | MOSFET N-CH 25V 23A TSDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 25 V | - |
| Rds On Drain Source Resistance | 1.8 mOhms | 1.8 mOhms | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Series | BSZ0xx | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Technology | - | Si | - |
| Id Continuous Drain Current | - | 40 A | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Qg Gate Charge | - | 29 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 69 W | - |
| Height | - | 1.1 mm | - |
| Length | - | 3.3 mm | - |
| Width | - | 3.3 mm | - |
| Forward Transconductance Min | - | 140 S | - |
| Fall Time | - | 3.4 ns | - |
| Rise Time | - | 4.4 ns | - |
| Typical Turn Off Delay Time | - | 26 ns | - |
| Typical Turn On Delay Time | - | 5.5 ns | - |
| Part # Aliases | - | BSZ018NE2LSATMA1 BSZ18NE2LSXT SP000756338 | - |