BSZ123

BSZ123N08NS3 G vs BSZ123N08NS3GATMA1 vs BSZ123N08NS3G

 
PartNumberBSZ123N08NS3 GBSZ123N08NS3GATMA1BSZ123N08NS3G
DescriptionMOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSDSON-8TSDSON-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance10.3 mOhms10.3 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge25 nC25 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation66 W66 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 3OptiMOS 3BSZ123N08
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min17 S17 S-
Fall Time4 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time18 ns18 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesBSZ123N08NS3GATMA1 BSZ123N8NS3GXT SP000443632BSZ123N08NS3 BSZ123N8NS3GXT G SP000443632-
Unit Weight0.003527 oz0.004938 oz-
Part Aliases--BSZ123N08NS3 BSZ123N08NS3GXT G SP000443632
Package Case--TSDSON-8
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ123N08NS3 G MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
BSZ123N08NS3GATMA1 MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
BSZ123N08NS3GATMA1 MOSFET N-CH 80V 40A TSDSON-8
BSZ123N08NS3 G MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3
BSZ123N08NS3G New and Original
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