BSZ160N10NS3

BSZ160N10NS3 G vs BSZ160N10NS3GATMA1

 
PartNumberBSZ160N10NS3 GBSZ160N10NS3GATMA1
DescriptionMOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTSDSON-8TSDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current40 A40 A
Rds On Drain Source Resistance14 mOhms14 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge25 nC25 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation63 W63 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.1 mm1.1 mm
Length3.3 mm3.3 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width3.3 mm3.3 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min16 S16 S
Fall Time5 ns5 ns
Product TypeMOSFETMOSFET
Rise Time10 ns10 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns22 ns
Typical Turn On Delay Time13 ns13 ns
Part # AliasesBSZ160N10NS3GATMA1 BSZ16N1NS3GXT SP000482390BSZ160N10NS3 BSZ16N1NS3GXT G SP000482390
Unit Weight-0.003527 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ160N10NS3 G MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
BSZ160N10NS3GATMA1 MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
BSZ160N10NS3GATMA1 MOSFET N-CH 100V 40A TSDSON-8
BSZ160N10NS3 G IGBT Transistors MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
BSZ160N10NS3GXT Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ160N10NS3GATMA1)
BSZ160N10NS3 New and Original
BSZ160N10NS3G New and Original
BSZ160N10NS3G. New and Original
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