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| PartNumber | BTS282ZE3180AATMA2 | BTS282ZE3180A | BTS282ZE3180AATMA1 |
| Description | MOSFET N-Ch 49V 36A D2PAK-6 | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 49 V | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Rds On Drain Source Resistance | 6.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | BTS282 | BTS282 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 36 ns | 36 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 37 ns | 37 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | 70 ns | - |
| Typical Turn On Delay Time | 30 ns | 30 ns | - |
| Part # Aliases | BTS282Z E3180A SP000910848 | - | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Part Aliases | - | BTS282Z E3180A SP000910848 | - |
| Package Case | - | TO-263-7 | - |
| Pd Power Dissipation | - | 300 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 36 A | - |
| Vds Drain Source Breakdown Voltage | - | 49 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.6 V | - |
| Rds On Drain Source Resistance | - | 6.5 mOhms | - |
| Qg Gate Charge | - | 155 nC | - |
| Forward Transconductance Min | - | 30 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BTS282ZE3180AATMA2 | MOSFET N-Ch 49V 36A D2PAK-6 | |
| BTS282ZE3180AATMA2 | MOSFET N-Ch 49V 36A D2PAK-6 | ||
| BTS282ZE3180A | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BTS282ZE3180AATMA1 | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BTS282ZE3180ANTMA1 | - Bulk (Alt: BTS282ZE3180ANTMA1) | ||
| BTS282ZE3180A/BTS282ZE3 | New and Original | ||
| BTS282ZE3180AXT | MOSFET N-Ch 49V 80A TO220-7 | ||
| BTS282ZE3180AATMA2-CUT TAPE | New and Original |