 | | |
| PartNumber | BUK761R6-40E,118 | BUK761R7-40E,118 |
| Description | MOSFET N-channel TrenchMOS intermed level FET | MOSFET N-channel TrenchMOS standard level FET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V |
| Id Continuous Drain Current | 120 A | 120 A |
| Rds On Drain Source Resistance | 1.57 mOhms | 1.32 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 145 nC | 118 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 349 W | 324 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Fall Time | 83 ns | 52 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 60 ns | 49 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 121 ns | 87 ns |
| Typical Turn On Delay Time | 42 ns | 35 ns |
| Unit Weight | 0.139332 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
BUK761R6-40E,118 | MOSFET N-channel TrenchMOS intermed level FET | |
| BUK761R7-40E,118 | MOSFET N-channel TrenchMOS standard level FET | ||
| BUK761R6-40E,118 | IGBT Transistors MOSFET N-channel TrenchMOS intermed level FET | ||
| BUK761R7-40E,118 | RF Bipolar Transistors MOSFET N-channel TrenchMOS standard level FET | ||
NXP Semiconductors |
BUK761R7-40E/GFJ | MOSFET N-CH D2PAK | |
| BUK761R8-30C,118 | MOSFET N-CH 30V 100A D2PAK | ||
| BUK761R7-40E118 | Now Nexperia BUK761R7-40E - Power Field-Effect Transistor, D2PAK | ||
| BUK761R6-40E118 | Now Nexperia BUK761R6-40E - Power Field-Effect Transistor, D2PAK | ||
| BUK761R8-30C118 | Now Nexperia BUK761R8-30C - Power Field-Effect Transistor, 312A I(D), 30V, 1800ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK761R8-30C | New and Original |