 | | |
| PartNumber | BUK9209-40B,118 | BUK9207-30B,118 |
| Description | MOSFET HIGH PERF TRENCHMOS | MOSFET HIGH PERF TRENCHMOS |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 30 V |
| Id Continuous Drain Current | 99 A | 112 A |
| Rds On Drain Source Resistance | 7 mOhms | 5 mOhms |
| Vgs Gate Source Voltage | 15 V | 15 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 185 C |
| Pd Power Dissipation | 167 W | 167 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Height | 2.38 mm | 2.38 mm |
| Length | 6.73 mm | 6.73 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Nexperia | Nexperia |
| Fall Time | 89 ns | 107 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 106 ns | 82 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 108 ns | 100 ns |
| Typical Turn On Delay Time | 29 ns | 19 ns |
| Part # Aliases | /T3 BUK9209-40B | /T3 BUK9207-30B |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
BUK9209-40B,118 | MOSFET HIGH PERF TRENCHMOS | |
| BUK9207-30B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9209-40B,118 | IGBT Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9207-30B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9207-30B | New and Original | ||
| BUK9209 | New and Original | ||
| BUK9209-40B | New and Original | ||
| BUK9209-40B.118 | Trans MOSFET N-CH 40V 99A 3-Pin(2+Tab) DPAK T/R (Alt: BUK9209-40B,118) | ||
| BUK9209-40B118 | Now Nexperia Power Field-Effect Transistor, 75A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |