BUK9608-55A

BUK9608-55A,118 vs BUK9608-55A vs BUK9608-55A118

 
PartNumberBUK9608-55A,118BUK9608-55ABUK9608-55A118
DescriptionMOSFET TAPE13 PWR-MOSNow Nexperia BUK9608-55A - Power Field-Effect Transistor, 125A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerNexperiaNXP-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current125 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation253 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time167 ns--
Product TypeMOSFET--
Rise Time175 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time280 ns--
Typical Turn On Delay Time40 ns--
Part # Aliases/T3 BUK9608-55A--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK9608-55A,118 MOSFET TAPE13 PWR-MOS
BUK9608-55A,118 Darlington Transistors MOSFET TAPE13 PWR-MOS
BUK9608-55A New and Original
BUK9608-55A118 Now Nexperia BUK9608-55A - Power Field-Effect Transistor, 125A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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