BUZ30AH stock, BUZ30AH, BUZ30AH3045AATMA1


PartNumber	BUZ30AH3045AATMA1	BUZ30AHXKSA1
Description	MOSFET N-Ch 200V 21A D2PAK-2	MOSFET N-Ch 200V 21A TO220FP-3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	Through Hole
Package / Case	TO-263-3	TO-220-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	200 V	200 V
Id Continuous Drain Current	21 A	21 A
Rds On Drain Source Resistance	100 mOhms	100 mOhms
Vgs th Gate Source Threshold Voltage	2.1 V	2.1 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	-	-
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	125 W	125 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	SIPMOS	SIPMOS
Packaging	Reel	Tube
Height	15.65 mm	15.65 mm
Length	10 mm	10 mm
Transistor Type	1 N-Channel	1 N-Channel
Width	4.4 mm	4.4 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	6 S	6 S
Fall Time	90 ns	90 ns
Product Type	MOSFET	MOSFET
Rise Time	70 ns	70 ns
Factory Pack Quantity	1000	500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	250 ns	250 ns
Typical Turn On Delay Time	30 ns	30 ns
Part # Aliases	BUZ30A BUZ3AH345AXT H3045A SP000736082	BUZ30A BUZ3AHXK H SP000682990
Unit Weight	0.139332 oz	0.211644 oz

Search Part Number : "BUZ30AH", Match & Start with "BUZ30AH" - Total : 6

Manufacturer	Part #	Description
Infineon Technologies	BUZ30AH3045AATMA1	MOSFET N-Ch 200V 21A D2PAK-2
	BUZ30AHXKSA1	MOSFET N-Ch 200V 21A TO220FP-3
	BUZ30AH3045AATMA1	MOSFET N-CH 200V 21A TO-263
	BUZ30AHXKSA1	MOSFET N-CH 200V 21A TO220-3
	BUZ30AH	Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB
	BUZ30AH3045A	Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

BUZ30AH