PartNumber | C3M0065090J | C3M0065090D | C3M0065090J-TR |
Description | MOSFET G3 SiC MOSFET 900V, 65mOhm | MOSFET G3 SiC MOSFET 900V, 65mOhm | MOSFET G3 SiC MOSFET 900V, 65mOhm |
Manufacturer | Cree, Inc. | Cree, Inc. | Cree, Inc. |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | SiC | SiC | SiC |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | TO-263-7 | TO-247-3 | TO-263-7 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | 900 V | 900 V |
Id Continuous Drain Current | 35 A | 36 A | 35 A |
Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | 90 mOhms |
Vgs th Gate Source Threshold Voltage | 1.8 V | 1.8 V | 1.8 V |
Vgs Gate Source Voltage | 18 V, - 8 V | 18 V, - 8 V | 18 V, - 8 V |
Qg Gate Charge | 30 nC | 30.4 nC | 30 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 113 W | 125 W | 113 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Reel |
Product | Power MOSFET | Power MOSFET | Power MOSFET |
Type | Silicon Carbide MOSFET | Silicon Carbide MOSFET | Silicon Carbide MOSFET |
Brand | Wolfspeed / Cree | Wolfspeed / Cree | Wolfspeed / Cree |
Forward Transconductance Min | 11.6 S | 11.6 S | 11.6 S |
Fall Time | 5 ns | 25 ns | 5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6.5 ns | 36 ns | 6.5 ns |
Factory Pack Quantity | 50 | 30 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | 28 ns | 15 ns |
Typical Turn On Delay Time | 7.2 ns | 21 ns | 7.2 ns |
Unit Weight | 0.056438 oz | 1.340411 oz | 0.056438 oz |
Moisture Sensitive | - | - | Yes |