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| PartNumber | CGHV59070F | CGHV50200F | CGHV50200F-AMP |
| Description | RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt | RF JFET Transistors GaN HEMT 4.4-5.0GHz, 200 Watt | RF Development Tools Test Board with GaN HEMT |
| Manufacturer | Qorvo | Qorvo | Cree, Inc. |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF Development Tools |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN SiC | GaN SiC | - |
| Gain | 19 dB | 15 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 28 V | - | - |
| Vgs Gate Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 817 mA | 80 mA | - |
| Output Power | 24 W | 7.2 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 150 C |
| Pd Power Dissipation | 28.8 W | 8.9 W | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | QFN-8 | - | - |
| Packaging | Tray | Gel Pack | Bulk |
| Configuration | Single | Single | - |
| Operating Frequency | 30 MHz to 1.215 GHz | DC to 25 GHz | - |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Series | QPD | TGF | - |
| Brand | Qorvo | Qorvo | Wolfspeed / Cree |
| Development Kit | QPD1000PCB401, QPD1000PCB402 | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF Development Tools |
| Factory Pack Quantity | 100 | 50 | 2 |
| Subcategory | Transistors | Transistors | Development Tools |
| Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
| Part # Aliases | 1131140 | 1113799 | - |
| Maximum Drain Gate Voltage | - | - | - |
| Application | - | Defense and Aerospace, Broadband Wireless | - |
| Forward Transconductance Min | - | - | - |
| NF Noise Figure | - | 1.3 dB | - |
| Shipping Restrictions | - | - | |
| Product | - | - | Evaluation Boards |
| Type | - | - | RF Transistors |
| Tool Is For Evaluation Of | - | - | CGHV50200F |
| Frequency | - | - | 4.4 GHz to 5 GHz |
| Operating Supply Voltage | - | - | 40 V |
| Description/Function | - | - | Evaluation board for CGHV50200F |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
N/A |
CGHV59070F | RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt | |
| CGHV59350F | RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt | ||
| CGHV50200F | RF JFET Transistors GaN HEMT 4.4-5.0GHz, 200 Watt | ||
| CGHV50200F-AMP | RF Development Tools Test Board with GaN HEMT | ||
| CGHV50200F | RF MOSFET HEMT 40V 440217 | ||
| CGHV59070F | RF MOSFET HEMT 50V 440224 | ||
| CGHV59070F-TB | TEST FIXTURE FOR CGHV59070F | ||
| CGHV59350F-TB | TEST FIXTURE FOR CGHV59350F | ||
| CGHV50200F-AMP | EVAL BOARD FOR CGHV50200 | ||
| CGHV59070F-AMP | EVAL BOARD WITH CGHV59070F | ||
| CGHV59350F | RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN |