CSD16325

CSD16325Q5 vs CSD16325 vs CSD16325C

 
PartNumberCSD16325Q5CSD16325CSD16325C
DescriptionMOSFET N-Channel NexFET Power MOSFET
ManufacturerTexas InstrumentsTI-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseVSON-Clip-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance2.2 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.1 W--
ConfigurationSingleSingle-
TradenameNexFETNexFET-
PackagingReelReel-
Height1 mm--
Length6 mm--
SeriesCSD16325Q5CSD16325Q5-
Transistor Type1 N-Channel1 N-Channel-
Width5 mm--
BrandTexas Instruments--
Forward Transconductance Min159 S--
Fall Time12 ns12 ns-
Product TypeMOSFET--
Rise Time16 ns16 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns32 ns-
Typical Turn On Delay Time10.5 ns10.5 ns-
Unit Weight0.004159 oz--
Package Case-VSON-Clip-8-
Pd Power Dissipation-3.1 W-
Vgs Gate Source Voltage-10 V-
Id Continuous Drain Current-33 A-
Vds Drain Source Breakdown Voltage-25 V-
Vgs th Gate Source Threshold Voltage-1.1 V-
Rds On Drain Source Resistance-2.2 mOhms-
Qg Gate Charge-18 nC-
Forward Transconductance Min-159 S-
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD16325Q5 MOSFET N-Channel NexFET Power MOSFET
CSD16325Q5C MOSFET DualCool N-Channel NexFET Power MOSFET
CSD16325 New and Original
CSD16325C New and Original
CSD16325Q5A New and Original
CSD16325Q5C MOSFET N-CH 25V 100A 8SON
CSD16325Q5 Darlington Transistors MOSFET N-Channel NexFET Power MOSFET
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