CY7C26

CY7C2665KV18-550BZXI vs CY7C2670KV18-550BZI vs CY7C2670KV18-450BZI

 
PartNumberCY7C2665KV18-550BZXICY7C2670KV18-550BZICY7C2670KV18-450BZI
DescriptionSRAM 144Mb 1.8V 550Mhz 4M x 36 QDR II SRAMSRAM 144Mb (4Mx36) QDR II QDR II + SRAMSRAM 144Mb 1.8V 450Mhz 4M x 36 DDR II SRAM
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNN
Memory Size144 Mbit144 Mbit144 Mbit
Organization4 M x 364 M x 364 M x 36
Access Time0.45 ns50 ns50 ns
Maximum Clock Frequency550 MHz550 MHz450 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max1.52 A1140 mA980 mA
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGA-165FBGA-165FBGA-165
PackagingTrayTrayTray
Memory TypeQDRDDRDDR
SeriesCY7C2665KV18CY7C2670KV18CY7C2670KV18
TypeSynchronousSynchronousSynchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity105105105
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Manufacturer Part # Description RFQ
Cypress Semiconductor
Cypress Semiconductor
CY7C2665KV18-550BZXI SRAM 144Mb 1.8V 550Mhz 4M x 36 QDR II SRAM
CY7C2670KV18-550BZXI SRAM 144Mb 1.8V 550Mhz 4M x 36 DDR II SRAM
CY7C2670KV18-550BZI SRAM 144Mb (4Mx36) QDR II QDR II + SRAM
CY7C2670KV18-450BZI SRAM 144Mb 1.8V 450Mhz 4M x 36 DDR II SRAM
CY7C2670KV18-550BZI New and Original
CY7C2670KV18-450BZI New and Original
CY7C2670KV18-550BZXI SRAM 144Mb 1.8V 550Mhz 4M x 36 DDR II SRAM
CY7C2665KV18-550BZXI SRAM 144Mb 1.8V 550Mhz 4M x 36 QDR II SRAM
CY7C269-40WC EPROM, 8K x 8, 28 Pin, Ceramic, DIP
CY7C269-45WC New and Original
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