 |  | | |
| PartNumber | DMN10H170SK3-13 | DMN10H170SK3 | DMN10H170SK3-13-79 |
| Description | MOSFET 100V N-CH MOSFET 100V 12A | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 140 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 9.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 12.8 ns | 12.8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11.1 ns | 11.1 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 42.6 ns | 42.6 ns | - |
| Typical Turn On Delay Time | 10.5 ns | 10.5 ns | - |
| Unit Weight | 0.017284 oz | - | - |
| Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | TO-252-3 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 42W | - |
| Drain to Source Voltage Vdss | - | 100V | - |
| Input Capacitance Ciss Vds | - | 1167pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 12A (Tc) | - |
| Rds On Max Id Vgs | - | 140 mOhm @ 5A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 9.7nC @ 10V | - |
| Pd Power Dissipation | - | 42 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | 12 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 140 mOhms | - |
| Qg Gate Charge | - | 9.7 nC | - |
| Forward Transconductance Min | - | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN10H170SK3-13 | MOSFET 100V N-CH MOSFET 100V 12A | |
| DMN10H170SK3 | New and Original | ||
| DMN10H170SK3-13-79 | New and Original | ||
| DMN10H170SK3-13 | Darlington Transistors MOSFET 100V N-CH MOSFET 100V 12A |