 |  | | |
| PartNumber | DMN2004DWK-7 | DMN2004DWK | DMN2004DWK-7-F |
| Description | MOSFET Dual N-Channel | ||
| Manufacturer | Diodes Incorporated | - | DIODES |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 540 mA | - | - |
| Rds On Drain Source Resistance | 550 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 0.53 nC | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMN2004 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 1.35 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 10.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.3 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13.8 ns | - | - |
| Typical Turn On Delay Time | 4.1 ns | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN2004DWK-7 | MOSFET Dual N-Channel | |
| DMN2004DWKQ-7 | MOSFET MOSFET BVDSS: 8V-24V | ||
| DMN2004DWK | New and Original | ||
| DMN2004DWK-7-F | New and Original | ||
| DMN2004DWK7 | MOSFET, AEC-Q101, DUAL N-CH, 20V, SOT363 | ||
| DMN2004DWKQ-7 | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | ||
| DMN2004DWK-7 | Darlington Transistors MOSFET Dual N-Channel |