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| PartNumber | DMN2004WK | DMN2004WK-7-CUT TAPE | DMN2004WK-7 |
| Description | IGBT Transistors MOSFET N-Channel | ||
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | FETs - Single | - | FETs - Single |
| Series | DMN2004 | - | DMN2004 |
| Packaging | Digi-ReelR Alternate Packaging | - | Digi-ReelR Alternate Packaging |
| Unit Weight | 0.000212 oz | - | 0.000212 oz |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | SC-70, SOT-323 | - | SC-70, SOT-323 |
| Technology | Si | - | Si |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | - | Surface Mount |
| Number of Channels | 1 Channel | - | 1 Channel |
| Supplier Device Package | SOT-323 | - | SOT-323 |
| Configuration | Single | - | Single |
| FET Type | MOSFET N-Channel, Metal Oxide | - | MOSFET N-Channel, Metal Oxide |
| Power Max | 200mW | - | 200mW |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Drain to Source Voltage Vdss | 20V | - | 20V |
| Input Capacitance Ciss Vds | 150pF @ 16V | - | 150pF @ 16V |
| FET Feature | Standard | - | Standard |
| Current Continuous Drain Id 25°C | 540mA (Ta) | - | 540mA (Ta) |
| Rds On Max Id Vgs | 550 mOhm @ 540mA, 4.5V | - | 550 mOhm @ 540mA, 4.5V |
| Vgs th Max Id | 1V @ 250μA | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | 200 mW | - | 200 mW |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Vgs Gate Source Voltage | 8 V | - | 8 V |
| Id Continuous Drain Current | 540 mA | - | 540 mA |
| Vds Drain Source Breakdown Voltage | 20 V | - | 20 V |
| Rds On Drain Source Resistance | 550 mOhms | - | 550 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Channel Mode | Enhancement | - | Enhancement |