| PartNumber | DMN26D0UDJ-7 | DMN26D0UFB4-7 |
| Description | MOSFET DUAL N-CH 20V 0.23A | MOSFET ENHANCE MODE MOSFET 20V N-Chan |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-963-6 | X2-DFN1006-3 |
| Number of Channels | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 240 mA | 240 mA |
| Rds On Drain Source Resistance | 3 Ohms | 3 Ohms |
| Vgs th Gate Source Threshold Voltage | 450 mV | 600 mV |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 300 mW | 350 mW |
| Configuration | Dual | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Product | MOSFET Gate Drivers | MOSFET Small Signal |
| Series | DMN26 | DMN26 |
| Transistor Type | 2 N-Channel | 1 N-Channel |
| Type | Dual N-Channel Enhancement Mode MOSFET | - |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 180 mS | 180 mS |
| Fall Time | 15.2 ns | 15.2 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.9 ns | 7.9 ns |
| Factory Pack Quantity | 10000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13.4 ns | 13.4 ns |
| Typical Turn On Delay Time | 3.8 ns | 3.8 ns |
| Unit Weight | - | 0.000028 oz |