 |  | | |
| PartNumber | DMN3026LVT-7 | DMN3026LVT | DMN3026LVT-7-F |
| Description | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOT-26-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.6 A | - | - |
| Rds On Drain Source Resistance | 23 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN3026 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.1 ns | - | - |
| Typical Turn On Delay Time | 2.2 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN3026LVT-7 | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | |
| DMN3026LVTQ-13 | MOSFET MOSFET BVDSS | ||
| DMN3026LVT | New and Original | ||
| DMN3026LVT-7-F | New and Original | ||
| DMN3026LVT-7 | Darlington Transistors MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF |