DMN3053

DMN3053L-7 vs DMN3053L-13 vs DMN3053L

 
PartNumberDMN3053L-7DMN3053L-13DMN3053L
DescriptionMOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pFMOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current4 A4 A-
Rds On Drain Source Resistance45 mOhms50 mOhms-
Vgs th Gate Source Threshold Voltage600 mV600 mV-
Vgs Gate Source Voltage10 V12 V-
Qg Gate Charge17.2 nC7.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.2 W1.2 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1 mm1 mm-
Length3 mm3 mm-
ProductEnhancement Mode MOSFETEnhancement Mode MOSFET-
SeriesDMN3053DMN3053-
Transistor Type1 N-Channel1 N-Channel-
TypeEnhancement Mode MOSFETEnhancement Mode MOSFET-
Width1.4 mm1.4 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time32 ns32 ns-
Product TypeMOSFETMOSFET-
Rise Time5.5 ns5.5 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time152 ns152 ns-
Typical Turn On Delay Time2 ns2 ns-
Unit Weight0.000282 oz0.000282 oz-
Forward Transconductance Min---
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN3053L-7 MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
DMN3053L-13 MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
DMN3053L New and Original
DMN3053L-7 Darlington Transistors MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
DMN3053L-13 MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
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