DMN33D8LT

DMN33D8LT-13 vs DMN33D8LT-7 vs DMN33D8LTQ-13

 
PartNumberDMN33D8LT-13DMN33D8LT-7DMN33D8LTQ-13
DescriptionMOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mWMOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mWMOSFET MOSFET BVDSS 25V-30V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-523-3SOT-523-3SOT-523-3
Number of Channels2 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationDualDualSingle
PackagingReelReelReel
SeriesDMN33DMN33-
Transistor Type2 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity10000300010000
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.000071 oz0.000071 oz-
Vds Drain Source Breakdown Voltage--30 V
Id Continuous Drain Current--115 mA
Rds On Drain Source Resistance--5 Ohms
Vgs th Gate Source Threshold Voltage--0.8 V
Vgs Gate Source Voltage--20 V
Qg Gate Charge--0.55 nC
Minimum Operating Temperature--- 55 C
Maximum Operating Temperature--+ 150 C
Pd Power Dissipation--300 mW
Channel Mode--Enhancement
Qualification--AEC-Q101
Fall Time--13.6 ns
Rise Time--2.6 ns
Typical Turn Off Delay Time--18.2 ns
Typical Turn On Delay Time--2.9 ns
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN33D8LT-13 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LT-7 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LTQ-7 MOSFET MOSFET BVDSS 25V-30V
DMN33D8LTQ-13 MOSFET MOSFET BVDSS 25V-30V
DMN33D8LT-13 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
DMN33D8LT-7 MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW
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