| PartNumber | DMN33D8LT-13 | DMN33D8LT-7 | DMN33D8LTQ-13 |
| Description | MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW | MOSFET 33V Dual N-Ch Enh 20Vgss 115mA 240mW | MOSFET MOSFET BVDSS 25V-30V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-523-3 | SOT-523-3 | SOT-523-3 |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Configuration | Dual | Dual | Single |
| Packaging | Reel | Reel | Reel |
| Series | DMN33 | DMN33 | - |
| Transistor Type | 2 N-Channel | - | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 10000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.000071 oz | 0.000071 oz | - |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 115 mA |
| Rds On Drain Source Resistance | - | - | 5 Ohms |
| Vgs th Gate Source Threshold Voltage | - | - | 0.8 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 0.55 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 300 mW |
| Channel Mode | - | - | Enhancement |
| Qualification | - | - | AEC-Q101 |
| Fall Time | - | - | 13.6 ns |
| Rise Time | - | - | 2.6 ns |
| Typical Turn Off Delay Time | - | - | 18.2 ns |
| Typical Turn On Delay Time | - | - | 2.9 ns |