 |  |  | |
| PartNumber | DMN6040SK3-13 | DMN6040SK3Q-13 | DMN6040SK3 |
| Description | MOSFET 60V N-CH MOSFET | MOSFET MOSFET BVDSS: 41V-60V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 30 mOhms | 40 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 22.4 nC | 22.4 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 42 W | 42 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN60 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 4 ns | 4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.1 ns | 8.1 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20.1 ns | 20.1 ns | - |
| Typical Turn On Delay Time | 6.6 ns | 6.6 ns | - |
| Unit Weight | 0.139332 oz | 0.011640 oz | - |
| Qualification | - | AEC-Q101 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6040SK3-13 | MOSFET 60V N-CH MOSFET | |
| DMN6040SK3Q-13 | MOSFET MOSFET BVDSS: 41V-60V | ||
| DMN6040SK3 | New and Original | ||
| DMN6040SK3-13 | Darlington Transistors MOSFET 60V N-CH MOSFET |